Surface Profile(Model: Bruker Dektak XT)
Description
The Dektak XT has a single-arch design, a true-colour HD optical camera and a 64-bit parallel processing architecture to achieve optimal measurement and operating efficiency.
Specifications
- 4 Å repeatability
- Single arch design
- Self-aligning style for effortless tip exchange
- Direct drive scan stage enabling rapid scans with desired performance
Applications
- Measurement of thick and thin films
Optical Microscope(Model: Olympus BX61)
Description
The motorized trinocular optical microscope is capable of 4 different imaging modes, viz. Bright Field, Dark Field, Polarized and Differential Interference Contrast (DIC). The system is mounted on an anti-vibration table. Advanced STREAMVISION Motion software is used to control the operation of the microscope.
Specifications
- Max. magnification: 2000 X
- Bright field (BF), dark field (DF) microscopy with differential interference contrast
- 3Max sample height: 25 mm
- Motorized nose pieces for BF and DF
Capabilities for Silicon Solar Cell Characterization
- PERC Cell Texture Pyramids
- Laser Ablation and LBSF Microstructure
- Front Side Metallization Fingers
Electrochemical CV Profiler(Model: WEP-CVP21) )
Description
The Wafer Profiler CVP21 is a handy tool to measure doping profiles in semiconductor layers by Electrochemical Capacitance Voltage Profiling.
CVP21 supports the COMPLETE spectrum of materials
- Group IV semiconductors such as Silicon (Si)
- III-V semiconductors such as Gallium Arsenide (GaAs) etc
CVP21 supports the COMPLETE sample range
- No Restrictions concerning the substrate (may be conductive or semi-insulating)
- Sample size: 4 x 2 mm2 to complete 8" wafer size are standard (smaller samples on request)
CVP21 supports the COMPLETE resolution range
- Concentration resolution < 1012 cm-3 to > 1021 cm-3
- Depth resolution 1 nm to 100 µm
Field Emission Scanning Electron Microscope with EDAX(Model: JEOL JSM 7610F+)
Description
The JSM-7610FPlus is an ultra-high resolution semi-in lens FE-SEM, which allows observation of extremely fine structures as well as elemental analysis at the micro or nano scale (using EDS). The microscope has a resolution of 0.8 nm@15 kV and 1.0 nm @1 kV.
Salient Features
- Semi-in lens type OL
- Energy Filtering with next generation r filter
- Retractable BE detector
- In lens Schottky Electron Gun
- Magnetic field cancellation system
- The Semi-in lens type objective lens and High Power Optics of the irradiation system deliver high-spatial resolution observation and stable analysis capability
Semi-Automated Four Point Probe System (Model: Napson Cresbox)
Descriptions Semi-Automated Four-Point Probe System
Helps in optimizing the process flow parameters for diffusion. A four-point probe is an arrangement for measuring the resistivity and sheet resistance of semiconductor samples. By passing a current through two outer probes and measuring the voltage through the inner probes allows the measurement of the substrate resistivity.
| Parameter | Range |
|---|---|
| Wafer Size | Up to 158.75 X 158.75 mm2 |
| Weight | 50 gms to 200 gms |
| Capability | bulk & thick films |
| Measurement | Accuracy : < 0.5% Repeatability : < 0.7% |
| Resistance | 1 mΩ to 1 MΩ |
| Resistivity | 1 mΩ to 30 kΩ |
| Sheet Resistance | 1 mΩ/□ to 1 MΩ /□ |
| Probe Tips Spacing | 0.6 mm, 1.0 mm |
| Vacuum provision for wafer holding |
Spectroscopic Ellipsometer(Model: JA Woolam M2000)
Description Spectroscopic Ellipsometer
Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures. Ellipsometry measures the change of polarization upon reflection and compares it to a model. The measured signal is the change in polarization as the incident radiation (in a known state) interacts with the material structure of interest (reflected, absorbed, scattered, or transmitted).
Specifications
- Vacuum holding provision for wafer holding
- Measurement of optical constants, dielectric constants, film thickness etc
- Wafer size up to 156 mm X 156 mm
- Mapping on whole wafer
- Angle of acquisitions incidence: 45 to 900
Fume hood
A fume hood is a ventilated, enclosed work space intended to capture, contain, and exhaust harmful or dangerous fumes, vapors, and particulate matter generated by procedures conducted within the fume hood.
Centrifugation system(Eltek, TC4100F)
Features
- Maximum capacity of rotor with lid and polypropylene tubes: 8 x 50 ml
- Maximum speed: 13,500 rpm
- Time of rotation: 1 min to 120 min
Vacuum annealing furnace(Excel instruments)
Features
- Maximum temperature reachable: 700 degree Celsius
- Maximum size of substrate: 156 mm x 156 mm
- PID controller: Programmable
Oven (Metrex Scientific Equipments)
Features
- Temperature Range: Maximum 300°C
- Heating medium: Hot Air
- Capacity: Up to 100L
- Temperature controller: Programmable
Three Zone Split Tube Furnace
Features
- HOT Zones: Three Hot Zones
- Maximum temperatures in each zone: 14000C
- Length of the Furnace: 95 cm
- Furnace cylindrical cavity size: 130 mm
Analytical Semi Micro Balance
- Pan size: 80 mm
- Minimum weight: 0.01 mg
- Maximum weight: 120 gm
Spin Coater
Features
- Minimum editable programme: 02 preset edible programme with minimum 10 steps per programme
- Rotational Speed: 100 rpm-10,000 rpm
- Substrate holder size: Circular substrate holders with size 10 mm, 15 mm, 25 mm and 50 mm
D. I. water system(model JMBM01245) (M) with lot no BM1SB4782
Features
- 2 stage filtration: 1st stage of purification cartridge contains pre-treatment for reverse osmosis followed by RO membrane 2nd stage contains mixed bed ion exchange resin and organics for removal of organic contaminants
- Production rate: 5 litr/hr
- External water storage tank capacity: 50 litr
- Product Water: Resistivity:18.2 Meg Ohm.cm (@ 25 degree C); TOC:<5 ppb; Bacteria : <0.1cfu/mL; Pyrogen: 0.001Eu/mL; Rnase <0.01 ng/mL
UV Ozone Cleaner
- UV lamp wavelengths: 185 nm and 254 nm
- Substrate tray size: 100 mm x 100 mm
- Maximum runtime: Less than 60 min
